Local Fading Memory Effects in a Tantalum Oxide ReRAM Cell from Hewlett Packard Labs - researchr publication authors

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Alon Ascoli, Nicolas Schmitt, Ioannis Messaris, Ahmet Samil Demirkol, Ronald Tetzlaff, John Paul Strachan, Leon O. Chua. Local Fading Memory Effects in a Tantalum Oxide ReRAM Cell from Hewlett Packard Labs. In IEEE International Conference on Metrology for eXtended Reality, Artificial Intelligence and Neural Engineering, MetroXRAINE 2023, Milano, Italy, October 25-27, 2023. pages 971-976, IEEE, 2023. [doi]

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