Read and Write Voltage Signal Optimization for Multi-Level-Cell (MLC) NAND Flash Memory

Chaudhry Adnan Aslam, Yong Liang Guan, Kui Cai. Read and Write Voltage Signal Optimization for Multi-Level-Cell (MLC) NAND Flash Memory. IEEE Transactions on Communications, 64(4):1613-1623, 2016. [doi]

@article{AslamGC16,
  title = {Read and Write Voltage Signal Optimization for Multi-Level-Cell (MLC) NAND Flash Memory},
  author = {Chaudhry Adnan Aslam and Yong Liang Guan and Kui Cai},
  year = {2016},
  doi = {10.1109/TCOMM.2016.2533498},
  url = {http://dx.doi.org/10.1109/TCOMM.2016.2533498},
  researchr = {https://researchr.org/publication/AslamGC16},
  cites = {0},
  citedby = {0},
  journal = {IEEE Transactions on Communications},
  volume = {64},
  number = {4},
  pages = {1613-1623},
}