A 11-ns, 3.85-fJ, Deep Sub-threshold, Energy Efficient Level Shifter in 65-nm CMOS

R. D. Balaji, Siddharth R. K., Sanmitra Bharat Naik, Y. B. Nithin Kumar, M. H. Vasantha, Edoardo Bonizzoni. A 11-ns, 3.85-fJ, Deep Sub-threshold, Energy Efficient Level Shifter in 65-nm CMOS. In IEEE International Symposium on Circuits and Systems, ISCAS 2023, Monterey, CA, USA, May 21-25, 2023. pages 1-5, IEEE, 2023. [doi]

@inproceedings{BalajiKNKVB23,
  title = {A 11-ns, 3.85-fJ, Deep Sub-threshold, Energy Efficient Level Shifter in 65-nm CMOS},
  author = {R. D. Balaji and Siddharth R. K. and Sanmitra Bharat Naik and Y. B. Nithin Kumar and M. H. Vasantha and Edoardo Bonizzoni},
  year = {2023},
  doi = {10.1109/ISCAS46773.2023.10181677},
  url = {https://doi.org/10.1109/ISCAS46773.2023.10181677},
  researchr = {https://researchr.org/publication/BalajiKNKVB23},
  cites = {0},
  citedby = {0},
  pages = {1-5},
  booktitle = {IEEE International Symposium on Circuits and Systems, ISCAS 2023, Monterey, CA, USA, May 21-25, 2023},
  publisher = {IEEE},
  isbn = {978-1-6654-5109-3},
}