A 29.5 dBm Class-E Outphasing RF Power Amplifier With Efficiency and Output Power Enhancement Circuits in 45nm CMOS

Aritra Banerjee, Rahmi Hezar, Lei Ding, Baher Haroun. A 29.5 dBm Class-E Outphasing RF Power Amplifier With Efficiency and Output Power Enhancement Circuits in 45nm CMOS. IEEE Trans. on Circuits and Systems, 64(8):1977-1988, 2017. [doi]

@article{BanerjeeHDH17,
  title = {A 29.5 dBm Class-E Outphasing RF Power Amplifier With Efficiency and Output Power Enhancement Circuits in 45nm CMOS},
  author = {Aritra Banerjee and Rahmi Hezar and Lei Ding and Baher Haroun},
  year = {2017},
  doi = {10.1109/TCSI.2017.2695243},
  url = {https://doi.org/10.1109/TCSI.2017.2695243},
  researchr = {https://researchr.org/publication/BanerjeeHDH17},
  cites = {0},
  citedby = {0},
  journal = {IEEE Trans. on Circuits and Systems},
  volume = {64},
  number = {8},
  pages = {1977-1988},
}