Extended TDDB power-law validation for high-voltage applications such as OTP memories in High-k CMOS 28nm FDSOI technology

A. Benoist, S. Denorme, X. Federspiel, Bruno Allard, Philippe Candelier. Extended TDDB power-law validation for high-voltage applications such as OTP memories in High-k CMOS 28nm FDSOI technology. In IEEE International Reliability Physics Symposium, IRPS 2015, Monterey, CA, USA, April 19-23, 2015. pages 3, IEEE, 2015. [doi]

@inproceedings{BenoistDFAC15,
  title = {Extended TDDB power-law validation for high-voltage applications such as OTP memories in High-k CMOS 28nm FDSOI technology},
  author = {A. Benoist and S. Denorme and X. Federspiel and Bruno Allard and Philippe Candelier},
  year = {2015},
  doi = {10.1109/IRPS.2015.7112804},
  url = {http://dx.doi.org/10.1109/IRPS.2015.7112804},
  researchr = {https://researchr.org/publication/BenoistDFAC15},
  cites = {0},
  citedby = {0},
  pages = {3},
  booktitle = {IEEE International Reliability Physics Symposium, IRPS 2015, Monterey, CA, USA, April 19-23, 2015},
  publisher = {IEEE},
  isbn = {978-1-4673-7362-3},
}