Jinshun Bi, Yuan Duan, Kai Xi, Bo Li 0051. 2-based resistive-random-access memory. Microelectronics Reliability, 88:891-897, 2018. [doi]
@article{BiDXL18,
title = {2-based resistive-random-access memory},
author = {Jinshun Bi and Yuan Duan and Kai Xi and Bo Li 0051},
year = {2018},
doi = {10.1016/j.microrel.2018.07.017},
url = {https://doi.org/10.1016/j.microrel.2018.07.017},
researchr = {https://researchr.org/publication/BiDXL18},
cites = {0},
citedby = {0},
journal = {Microelectronics Reliability},
volume = {88},
pages = {891-897},
}