Nanometer MOSFET Effects on the Minimum-Energy Point of Sub-45nm Subthreshold Logic---Mitigation at Technology and Circuit Levels

David Bol, Denis Flandre, Jean-Didier Legat. Nanometer MOSFET Effects on the Minimum-Energy Point of Sub-45nm Subthreshold Logic---Mitigation at Technology and Circuit Levels. ACM Trans. Design Autom. Electr. Syst., 16(1):2, 2010. [doi]

@article{BolFL10,
  title = {Nanometer MOSFET Effects on the Minimum-Energy Point of Sub-45nm Subthreshold Logic---Mitigation at Technology and Circuit Levels},
  author = {David Bol and Denis Flandre and Jean-Didier Legat},
  year = {2010},
  doi = {10.1145/1870109.1870111},
  url = {http://dx.doi.org/10.1145/1870109.1870111},
  tags = {logic},
  researchr = {https://researchr.org/publication/BolFL10},
  cites = {0},
  citedby = {0},
  journal = {ACM Trans. Design Autom. Electr. Syst.},
  volume = {16},
  number = {1},
  pages = {2},
}