Sb-Based n- and p-Channel Heterostructure FETs for High-Speed, Low-Power Applications

J. Brad Boos, Brian R. Bennett, Nicolas A. Papanicolaou, Mario G. Ancona, James G. Champlain, Yeong-Chang Chou, Michael D. Lange, Jeffrey M. Yang, Robert Bass, Doewon Park, Ben V. Shanabrook. Sb-Based n- and p-Channel Heterostructure FETs for High-Speed, Low-Power Applications. IEICE Transactions, 91-C(7):1050-1057, 2008. [doi]

@article{BoosBPACCLYBPS08,
  title = {Sb-Based n- and p-Channel Heterostructure FETs for High-Speed, Low-Power Applications},
  author = {J. Brad Boos and Brian R. Bennett and Nicolas A. Papanicolaou and Mario G. Ancona and James G. Champlain and Yeong-Chang Chou and Michael D. Lange and Jeffrey M. Yang and Robert Bass and Doewon Park and Ben V. Shanabrook},
  year = {2008},
  doi = {10.1093/ietele/e91-c.7.1050},
  url = {http://dx.doi.org/10.1093/ietele/e91-c.7.1050},
  tags = {rule-based},
  researchr = {https://researchr.org/publication/BoosBPACCLYBPS08},
  cites = {0},
  citedby = {0},
  journal = {IEICE Transactions},
  volume = {91-C},
  number = {7},
  pages = {1050-1057},
}