Modeling of a floating-gate EEPROM cell using a charge sheet approach including variable tunneling capacitance and polysilicon gate depletion effect - researchr publication authors

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Rachid Bouchakour, N. Harabech, P. Canet, Ph. Boivin, J. M. Mirabel. Modeling of a floating-gate EEPROM cell using a charge sheet approach including variable tunneling capacitance and polysilicon gate depletion effect. In International Symposium on Circuits and Systems (ISCAS 2001), 6-9 May 2001, Sydney, Australia. pages 822-825, IEEE, 2001. [doi]

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