Minxi Cai, Ruohe Yao. A threshold voltage and drain current model for symmetric dual-gate amorphous InGaZnO thin film transistors. Science in China Series F: Information Sciences, 61(2), 2018. [doi]
@article{CaiY18-1,
title = {A threshold voltage and drain current model for symmetric dual-gate amorphous InGaZnO thin film transistors},
author = {Minxi Cai and Ruohe Yao},
year = {2018},
doi = {10.1007/s11432-016-9049-2},
url = {https://doi.org/10.1007/s11432-016-9049-2},
researchr = {https://researchr.org/publication/CaiY18-1},
cites = {0},
citedby = {0},
journal = {Science in China Series F: Information Sciences},
volume = {61},
number = {2},
}