A 690mV 4.4Gbps/pin all-digital LPDDR4 PHY in 10nm FinFET technology

Kwanyeob Chae, JongRyun Choi, Shinyoung Yi, Won Lee, Sanghoon Joo, Hyunhyuck Kim, Hyungkwon Yi, Yoonjee Nam, Jinho Choi, Sanghune Park, Sanghyun Lee. A 690mV 4.4Gbps/pin all-digital LPDDR4 PHY in 10nm FinFET technology. In nd European Solid-State Circuits Conference, Lausanne, Switzerland, September 12-15, 2016. pages 461-464, IEEE, 2016. [doi]

@inproceedings{ChaeCYLJKYNCPL16,
  title = {A 690mV 4.4Gbps/pin all-digital LPDDR4 PHY in 10nm FinFET technology},
  author = {Kwanyeob Chae and JongRyun Choi and Shinyoung Yi and Won Lee and Sanghoon Joo and Hyunhyuck Kim and Hyungkwon Yi and Yoonjee Nam and Jinho Choi and Sanghune Park and Sanghyun Lee},
  year = {2016},
  doi = {10.1109/ESSCIRC.2016.7598341},
  url = {http://dx.doi.org/10.1109/ESSCIRC.2016.7598341},
  researchr = {https://researchr.org/publication/ChaeCYLJKYNCPL16},
  cites = {0},
  citedby = {0},
  pages = {461-464},
  booktitle = {nd European Solid-State Circuits Conference, Lausanne, Switzerland, September 12-15, 2016},
  publisher = {IEEE},
  isbn = {978-1-5090-2972-3},
}