Reduction of Threading Dislocation by Using Pattern Sapphire Substrate on GaN to Enhance Schottky Diode's Performance - researchr publication authors

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Wen-I Cheng, Cheng-Yen Chien, Bo-Han Kung, Cheng-Wei Yen, Chieh-Hsiung Kuan. Reduction of Threading Dislocation by Using Pattern Sapphire Substrate on GaN to Enhance Schottky Diode's Performance. In Proceedings of the 2nd International Conference on Electronics, Communications and Control Engineering, ICECC 2019, Phuket, Thailand, April 13 - 16, 2019. pages 72-74, ACM, 2019. [doi]

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