Design and Simulation of Long-Retention Capacitorless 1T-DRAM Using Experimentally Calibrated Process and Device Simulations

Shao-Han Cheng, Chun-Hung Wang, Fu-Chang Hsu, Yao-Jen Lee, Yiming Li. Design and Simulation of Long-Retention Capacitorless 1T-DRAM Using Experimentally Calibrated Process and Device Simulations. In 27th International Symposium on Quality Electronic Design, ISQED 2026, San Francisco, CA, USA, April 8-10, 2026. pages 1-5, IEEE, 2026. [doi]

@inproceedings{ChengWHLL26,
  title = {Design and Simulation of Long-Retention Capacitorless 1T-DRAM Using Experimentally Calibrated Process and Device Simulations},
  author = {Shao-Han Cheng and Chun-Hung Wang and Fu-Chang Hsu and Yao-Jen Lee and Yiming Li},
  year = {2026},
  doi = {10.1109/ISQED69900.2026.11534677},
  url = {https://doi.org/10.1109/ISQED69900.2026.11534677},
  researchr = {https://researchr.org/publication/ChengWHLL26},
  cites = {0},
  citedby = {0},
  pages = {1-5},
  booktitle = {27th International Symposium on Quality Electronic Design, ISQED 2026, San Francisco, CA, USA, April 8-10, 2026},
  publisher = {IEEE},
  isbn = {979-8-3315-8361-3},
}