Robustness Evaluation of MOSFETs by Equivalent Cell Behavioral Model of the Gate Parasitic Resistance - researchr publication authors

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Filippo Chimento, Salvatore Musumeci, Angelo Raciti, S. Sannino, A. Magrì, Maurizio Melito, F. Zara. Robustness Evaluation of MOSFETs by Equivalent Cell Behavioral Model of the Gate Parasitic Resistance. In Conference Record of the 2007 IEEE Industry Applications Conference Forty-Second IAS Annual Meeting, New Orleans, LA, USA, September 23-27, 2007. pages 350-357, IEEE, 2007. [doi]

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