Thin-Film Transistor Simulations With the Voltage-In-Current Latency Insertion Method - researchr publication authors

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Wei-Chun Chin, Andrei Pashkovich, José E. Schutt-Ainé, Nur Syazreen Ahmad, Patrick Goh. Thin-Film Transistor Simulations With the Voltage-In-Current Latency Insertion Method. IEEE Access, 9:159334-159348, 2021. [doi]

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