Min Su Cho, Jae Hwa Seo, Sang Ho Lee, Hwan Soo Jang, In Man Kang. Fabrication of AlGaN/GaN Fin-Type HEMT Using a Novel T-Gate Process for Improved Radio-Frequency Performance. IEEE Access, 8:139156-139160, 2020. [doi]
@article{ChoSLJK20,
title = {Fabrication of AlGaN/GaN Fin-Type HEMT Using a Novel T-Gate Process for Improved Radio-Frequency Performance},
author = {Min Su Cho and Jae Hwa Seo and Sang Ho Lee and Hwan Soo Jang and In Man Kang},
year = {2020},
doi = {10.1109/ACCESS.2020.3011103},
url = {https://doi.org/10.1109/ACCESS.2020.3011103},
researchr = {https://researchr.org/publication/ChoSLJK20},
cites = {0},
citedby = {0},
journal = {IEEE Access},
volume = {8},
pages = {139156-139160},
}