A vertical power MOSFET with the extended trench oxide

Hyeongdo Choi, Doohyung Cho, Gilyong Song, Kwangsoo Kim. A vertical power MOSFET with the extended trench oxide. In International Conference on Electronics, Information and Communications, ICEIC 2014, Kota Kinabalu, Sabah, Malaysia, January 15-18, 2014. pages 1-2, IEEE, 2014. [doi]

@inproceedings{ChoiCSK14,
  title = {A vertical power MOSFET with the extended trench oxide},
  author = {Hyeongdo Choi and Doohyung Cho and Gilyong Song and Kwangsoo Kim},
  year = {2014},
  doi = {10.1109/ELINFOCOM.2014.6914421},
  url = {https://doi.org/10.1109/ELINFOCOM.2014.6914421},
  researchr = {https://researchr.org/publication/ChoiCSK14},
  cites = {0},
  citedby = {0},
  pages = {1-2},
  booktitle = {International Conference on Electronics, Information and Communications, ICEIC 2014, Kota Kinabalu, Sabah, Malaysia, January 15-18, 2014},
  publisher = {IEEE},
}