Systematic Study on Positive Bias Temperature Instability(PBTI) of ZrO2-based Ge nMOSFETs with Interlayer Passivations - researchr publication authors

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Lulu Chou, Xiao Yu, Huan Liu, Yan Liu, Genquan Han, Yue Hao. Systematic Study on Positive Bias Temperature Instability(PBTI) of ZrO2-based Ge nMOSFETs with Interlayer Passivations. In International Conference on IC Design and Technology, ICICDT 2022, Hanoi, Vietnam, September 21-23, 2022. pages 12-15, IEEE, 2022. [doi]

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