Novel Threshold Voltage Model Incorporating Band-to-Band Tunneling in Heterostructure p-MOSFET - researchr publication authors

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Joy Chowdhury, Arpan Deyasi, Angsuman Sarkar, Kamalakanta Mahapatra. Novel Threshold Voltage Model Incorporating Band-to-Band Tunneling in Heterostructure p-MOSFET. In IEEE International Symposium on Smart Electronic Systems, iSES 2019 (Formerly iNiS), Rourkela, India, December 16-18, 2019. pages 373-376, IEEE, 2019. [doi]

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