Characterization and modeling of silicon carbide power devices and paralleling operation

Yutian Cui, Madhu S. Chinthavali, Fan Xu, Leon M. Tolbert. Characterization and modeling of silicon carbide power devices and paralleling operation. In 21st IEEE International Symposium on Industrial Electronics, ISIE 2012, Hangzhou, China, 28-31 May, 2012. pages 228-233, IEEE, 2012. [doi]

@inproceedings{CuiCXT12,
  title = {Characterization and modeling of silicon carbide power devices and paralleling operation},
  author = {Yutian Cui and Madhu S. Chinthavali and Fan Xu and Leon M. Tolbert},
  year = {2012},
  doi = {10.1109/ISIE.2012.6237089},
  url = {https://doi.org/10.1109/ISIE.2012.6237089},
  researchr = {https://researchr.org/publication/CuiCXT12},
  cites = {0},
  citedby = {0},
  pages = {228-233},
  booktitle = {21st IEEE International Symposium on Industrial Electronics, ISIE 2012, Hangzhou, China, 28-31 May, 2012},
  publisher = {IEEE},
}