Lateral GaN Schottky Barrier Diode for Wireless High-Power Transfer Application With High RF/DC Conversion Efficiency: From Circuit Construction and Device Technologies to System Demonstration

Kui Dang, JinCheng Zhang, Hong Zhou, Shan Yin, Tao Zhang, Jing Ning, Yachao Zhang, Zhaoke Bian, Jiabo Chen, Xiaoling Duan, Sheng-Lei Zhao, Yue Hao. Lateral GaN Schottky Barrier Diode for Wireless High-Power Transfer Application With High RF/DC Conversion Efficiency: From Circuit Construction and Device Technologies to System Demonstration. IEEE Transactions on Industrial Electronics, 67(8):6597-6606, 2020. [doi]

@article{DangZZYZNZBCDZH20,
  title = {Lateral GaN Schottky Barrier Diode for Wireless High-Power Transfer Application With High RF/DC Conversion Efficiency: From Circuit Construction and Device Technologies to System Demonstration},
  author = {Kui Dang and JinCheng Zhang and Hong Zhou and Shan Yin and Tao Zhang and Jing Ning and Yachao Zhang and Zhaoke Bian and Jiabo Chen and Xiaoling Duan and Sheng-Lei Zhao and Yue Hao},
  year = {2020},
  doi = {10.1109/TIE.2019.2939968},
  url = {https://doi.org/10.1109/TIE.2019.2939968},
  researchr = {https://researchr.org/publication/DangZZYZNZBCDZH20},
  cites = {0},
  citedby = {0},
  journal = {IEEE Transactions on Industrial Electronics},
  volume = {67},
  number = {8},
  pages = {6597-6606},
}