A 32A 5V-Input, 94.2% Peak Efficiency High-Frequency Power Converter Module Featuring Package-Integrated Low-Voltage GaN NMOS Power Transistors

Nachiket V. Desai, Harish K. Krishnamurthy, William Lambert, Jingshu Yu, Han Wui Then, Nicolas Butzen, Sheldon Weng, Christopher Schaef, N. Nidhi, Marko Radosavljevic, Johann Rode, Justin Sandford, Kaladhar Radhakrishnan, Krishnan Ravichandran, Bernhard Sell, James W. Tschanz, Vivek De. A 32A 5V-Input, 94.2% Peak Efficiency High-Frequency Power Converter Module Featuring Package-Integrated Low-Voltage GaN NMOS Power Transistors. In 2021 Symposium on VLSI Circuits, Kyoto, Japan, June 13-19, 2021. pages 1-2, IEEE, 2021. [doi]

@inproceedings{DesaiKLYTBWSNRR21,
  title = {A 32A 5V-Input, 94.2% Peak Efficiency High-Frequency Power Converter Module Featuring Package-Integrated Low-Voltage GaN NMOS Power Transistors},
  author = {Nachiket V. Desai and Harish K. Krishnamurthy and William Lambert and Jingshu Yu and Han Wui Then and Nicolas Butzen and Sheldon Weng and Christopher Schaef and N. Nidhi and Marko Radosavljevic and Johann Rode and Justin Sandford and Kaladhar Radhakrishnan and Krishnan Ravichandran and Bernhard Sell and James W. Tschanz and Vivek De},
  year = {2021},
  doi = {10.23919/VLSICircuits52068.2021.9492350},
  url = {https://doi.org/10.23919/VLSICircuits52068.2021.9492350},
  researchr = {https://researchr.org/publication/DesaiKLYTBWSNRR21},
  cites = {0},
  citedby = {0},
  pages = {1-2},
  booktitle = {2021 Symposium on VLSI Circuits, Kyoto, Japan, June 13-19, 2021},
  publisher = {IEEE},
  isbn = {978-4-86348-780-2},
}