A new degradation model and lifetime extrapolation technique for lightly doped drain nMOSFETs under hot-carrier degradation - researchr publication authors

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R. Dreesen, K. Croes, J. Manca, Ward De Ceuninck, Luc De Schepper, A. Pergoot, Guido Groeseneken. A new degradation model and lifetime extrapolation technique for lightly doped drain nMOSFETs under hot-carrier degradation. Microelectronics Reliability, 41(3):437-443, 2001. [doi]

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