BaoXing Duan, Yintang Yang. Breakdown voltage analysis for the new RESURF AlGaN/GaN HEMTs. Science in China Series F: Information Sciences, 55(2):473-479, 2012. [doi]
@article{DuanY12-2, title = {Breakdown voltage analysis for the new RESURF AlGaN/GaN HEMTs}, author = {BaoXing Duan and Yintang Yang}, year = {2012}, doi = {10.1007/s11432-011-4496-0}, url = {http://dx.doi.org/10.1007/s11432-011-4496-0}, researchr = {https://researchr.org/publication/DuanY12-2}, cites = {0}, citedby = {0}, journal = {Science in China Series F: Information Sciences}, volume = {55}, number = {2}, pages = {473-479}, }