Modelling of Process Parameters for 32nm PMOS Transistor Using Taguchi Method

H. A. Elgomati, B. Y. Majlis, A. M. Abdul Hamid, P. M. Susthitha, I. Ahmad. Modelling of Process Parameters for 32nm PMOS Transistor Using Taguchi Method. In David Al-Dabass, Jasmy Yunus, Dayu Giriantari, Zuwairie Ibrahim, Satya Kumar, editors, Sixth Asia Modelling Symposium, AMS 2012, Kuala Lumpur, Malaysia and Bali, Indonesia, May 29-31, 2012. pages 40-45, IEEE Computer Society, 2012. [doi]

@inproceedings{ElgomatiMHSA12,
  title = {Modelling of Process Parameters for 32nm PMOS Transistor Using Taguchi Method},
  author = {H. A. Elgomati and B. Y. Majlis and A. M. Abdul Hamid and P. M. Susthitha and I. Ahmad},
  year = {2012},
  doi = {10.1109/AMS.2012.22},
  url = {http://doi.ieeecomputersociety.org/10.1109/AMS.2012.22},
  researchr = {https://researchr.org/publication/ElgomatiMHSA12},
  cites = {0},
  citedby = {0},
  pages = {40-45},
  booktitle = {Sixth Asia Modelling Symposium, AMS 2012, Kuala Lumpur, Malaysia and Bali, Indonesia, May 29-31, 2012},
  editor = {David Al-Dabass and Jasmy Yunus and Dayu Giriantari and Zuwairie Ibrahim and Satya Kumar},
  publisher = {IEEE Computer Society},
  isbn = {978-1-4673-1957-7},
}