Tetsuo Endoh. Embedded nonvolatile memory with STT-MRAMs and its application for nonvolatile brain-inspired VLSIs. In 2017 International Symposium on VLSI Design, Automation and Test, VLSI-DAT 2017, Hsinchu, Taiwan, April 24-27, 2017. pages 1-3, IEEE, 2017. [doi]
@inproceedings{Endoh17,
title = {Embedded nonvolatile memory with STT-MRAMs and its application for nonvolatile brain-inspired VLSIs},
author = {Tetsuo Endoh},
year = {2017},
doi = {10.1109/VLSI-DAT.2017.7939702},
url = {https://doi.org/10.1109/VLSI-DAT.2017.7939702},
researchr = {https://researchr.org/publication/Endoh17},
cites = {0},
citedby = {0},
pages = {1-3},
booktitle = {2017 International Symposium on VLSI Design, Automation and Test, VLSI-DAT 2017, Hsinchu, Taiwan, April 24-27, 2017},
publisher = {IEEE},
isbn = {978-1-5090-3969-2},
}