Definition of curve fitting parameter to study tunneling and trapping of electrons in Si/ultra-thin SiO::2::/metal structures

V. Filip, Hei Wong, D. Nicolaescu. Definition of curve fitting parameter to study tunneling and trapping of electrons in Si/ultra-thin SiO::2::/metal structures. Microelectronics Reliability, 46(7):1027-1034, 2006. [doi]

@article{FilipWN06,
  title = {Definition of curve fitting parameter to study tunneling and trapping of electrons in Si/ultra-thin SiO::2::/metal structures},
  author = {V. Filip and Hei Wong and D. Nicolaescu},
  year = {2006},
  doi = {10.1016/j.microrel.2005.10.014},
  url = {http://dx.doi.org/10.1016/j.microrel.2005.10.014},
  researchr = {https://researchr.org/publication/FilipWN06},
  cites = {0},
  citedby = {0},
  journal = {Microelectronics Reliability},
  volume = {46},
  number = {7},
  pages = {1027-1034},
}