Analysis and resolution of a thermally accelerated early life failure mechanism in a 40 V GaN FET

Donald A. Gajewski, Randall D. Lewis, Benjamin M. Decker. Analysis and resolution of a thermally accelerated early life failure mechanism in a 40 V GaN FET. Microelectronics Reliability, 54(12):2675-2681, 2014. [doi]

Authors

Donald A. Gajewski

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Randall D. Lewis

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Benjamin M. Decker

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