Amin Ashraf Gandomi, Jack Baskin. High Frequency Three-phase 5-level T-type DC-DC Converter Using SiC MOSFETs. In 29th IEEE International Symposium on Industrial Electronics, ISIE 2020, Delft, The Netherlands, June 17-19, 2020. pages 717-722, IEEE, 2020. [doi]
@inproceedings{GandomiB20, title = {High Frequency Three-phase 5-level T-type DC-DC Converter Using SiC MOSFETs}, author = {Amin Ashraf Gandomi and Jack Baskin}, year = {2020}, doi = {10.1109/ISIE45063.2020.9152410}, url = {https://doi.org/10.1109/ISIE45063.2020.9152410}, researchr = {https://researchr.org/publication/GandomiB20}, cites = {0}, citedby = {0}, pages = {717-722}, booktitle = {29th IEEE International Symposium on Industrial Electronics, ISIE 2020, Delft, The Netherlands, June 17-19, 2020}, publisher = {IEEE}, isbn = {978-1-7281-5635-4}, }