High reliability in PHEMT MMICs with dual-etch-stop AlAs layers for high-speed RF switch applications

Frank Gao. High reliability in PHEMT MMICs with dual-etch-stop AlAs layers for high-speed RF switch applications. Microelectronics Reliability, 43(6):829-837, 2003. [doi]

@article{Gao03-1,
  title = {High reliability in PHEMT MMICs with dual-etch-stop AlAs layers for high-speed RF switch applications},
  author = {Frank Gao},
  year = {2003},
  doi = {10.1016/S0026-2714(03)00067-2},
  url = {http://dx.doi.org/10.1016/S0026-2714(03)00067-2},
  tags = {reliability},
  researchr = {https://researchr.org/publication/Gao03-1},
  cites = {0},
  citedby = {0},
  journal = {Microelectronics Reliability},
  volume = {43},
  number = {6},
  pages = {829-837},
}