Feng Gao, John P. Hayes. Gate Sizing and Vt Assignment for Active-Mode Leakage Power Reduction. J. Low Power Electronics, 2(2):230-239, 2006. [doi]
@article{GaoH06,
title = {Gate Sizing and Vt Assignment for Active-Mode Leakage Power Reduction},
author = {Feng Gao and John P. Hayes},
year = {2006},
doi = {10.1166/jolpe.2006.056},
url = {http://dx.doi.org/10.1166/jolpe.2006.056},
researchr = {https://researchr.org/publication/GaoH06},
cites = {0},
citedby = {0},
journal = {J. Low Power Electronics},
volume = {2},
number = {2},
pages = {230-239},
}