Analytical modeling of RDF effects on the threshold voltage in short-channel double-gate MOSFETs

Michael Graef, Franziska Hain, Fabian Hosenfeld, Fabian Horst, Atieh Farokhnejad, Benjamín Iñíguez, Alexander Kloes. Analytical modeling of RDF effects on the threshold voltage in short-channel double-gate MOSFETs. In 24th International Conference Mixed Design of Integrated Circuits and Systems, MIXDES 2017, Bydgoszcz, Poland, June 22-24, 2017. pages 127-131, IEEE, 2017. [doi]

@inproceedings{GraefHHHFIK17,
  title = {Analytical modeling of RDF effects on the threshold voltage in short-channel double-gate MOSFETs},
  author = {Michael Graef and Franziska Hain and Fabian Hosenfeld and Fabian Horst and Atieh Farokhnejad and Benjamín Iñíguez and Alexander Kloes},
  year = {2017},
  doi = {10.23919/MIXDES.2017.8005168},
  url = {https://doi.org/10.23919/MIXDES.2017.8005168},
  researchr = {https://researchr.org/publication/GraefHHHFIK17},
  cites = {0},
  citedby = {0},
  pages = {127-131},
  booktitle = {24th International Conference Mixed Design of Integrated Circuits and Systems, MIXDES 2017, Bydgoszcz, Poland, June 22-24, 2017},
  publisher = {IEEE},
  isbn = {978-83-63578-12-1},
}