195-nW 120-dB subthreshold CMOS OTA driving up to 200 pF and occupying only 4.4-10-3 mm2

Alfio Dario Grasso, Davide Marano, Gaetano Palumbo, Salvatore Pennisi. 195-nW 120-dB subthreshold CMOS OTA driving up to 200 pF and occupying only 4.4-10-3 mm2. In 2015 IEEE International Conference on Electronics, Circuits, and Systems, ICECS 2015, Cairo, Egypt, December 6-9, 2015. pages 65-68, IEEE, 2015. [doi]

@inproceedings{GrassoMPP15-0,
  title = {195-nW 120-dB subthreshold CMOS OTA driving up to 200 pF and occupying only 4.4-10-3 mm2},
  author = {Alfio Dario Grasso and Davide Marano and Gaetano Palumbo and Salvatore Pennisi},
  year = {2015},
  doi = {10.1109/ICECS.2015.7440250},
  url = {http://dx.doi.org/10.1109/ICECS.2015.7440250},
  researchr = {https://researchr.org/publication/GrassoMPP15-0},
  cites = {0},
  citedby = {0},
  pages = {65-68},
  booktitle = {2015 IEEE International Conference on Electronics, Circuits, and Systems, ICECS 2015, Cairo, Egypt, December 6-9, 2015},
  publisher = {IEEE},
  isbn = {978-1-5090-0246-7},
}