Onefold coordinated oxygen atom: an electron trap in the silicon oxide

V. A. Gritsenko, A. V. Shaposhnikov, Yu. N. Novikov, A. P. Baraban, Hei Wong, G. M. Zhidomirov, M. Roger. Onefold coordinated oxygen atom: an electron trap in the silicon oxide. Microelectronics Reliability, 43(4):665-669, 2003. [doi]

@article{GritsenkoSNBWZR03,
  title = {Onefold coordinated oxygen atom: an electron trap in the silicon oxide},
  author = {V. A. Gritsenko and A. V. Shaposhnikov and Yu. N. Novikov and A. P. Baraban and Hei Wong and G. M. Zhidomirov and M. Roger},
  year = {2003},
  doi = {10.1016/S0026-2714(03)00030-1},
  url = {http://dx.doi.org/10.1016/S0026-2714(03)00030-1},
  researchr = {https://researchr.org/publication/GritsenkoSNBWZR03},
  cites = {0},
  citedby = {0},
  journal = {Microelectronics Reliability},
  volume = {43},
  number = {4},
  pages = {665-669},
}