A 32 kb 0.35-1.2 V, 50 MHz-2.5 GHz Bit-Interleaved SRAM With 8 T SRAM Cell and Data Dependent Write Assist in 28-nm UTBB-FDSOI CMOS - researchr publication authors

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Anuj Grover, G. S. Visweswaran, Chittoor R. Parthasarathy, Mohammad Daud, David Turgis, Bastien Giraud, Jean-Philippe Noel, Ivan Miro Panades, Guillaume Moritz, Edith Beigné, Philippe Flatresse, Promod Kumar, Shamsi Azmi. A 32 kb 0.35-1.2 V, 50 MHz-2.5 GHz Bit-Interleaved SRAM With 8 T SRAM Cell and Data Dependent Write Assist in 28-nm UTBB-FDSOI CMOS. IEEE Trans. on Circuits and Systems, 64-I(9):2438-2447, 2017. [doi]

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