Shourya Gupta, Kirti Gupta, Neeta Pandey. min Analysis of a Subthreshold 10T SRAM Bit Cell With Variation Tolerant Write and Divided Bit-Line Read. IEEE Trans. on Circuits and Systems, 65-I(10):3326-3337, 2018. [doi]
@article{GuptaGP18,
title = {min Analysis of a Subthreshold 10T SRAM Bit Cell With Variation Tolerant Write and Divided Bit-Line Read},
author = {Shourya Gupta and Kirti Gupta and Neeta Pandey},
year = {2018},
doi = {10.1109/TCSI.2018.2813326},
url = {https://doi.org/10.1109/TCSI.2018.2813326},
researchr = {https://researchr.org/publication/GuptaGP18},
cites = {0},
citedby = {0},
journal = {IEEE Trans. on Circuits and Systems},
volume = {65-I},
number = {10},
pages = {3326-3337},
}