A data-independent 9T SRAM cell with enhanced ION/IOFF ratio and RBL voltage swing in near threshold and sub-threshold region

Monica Gupta, Kirti Gupta, Neeta Pandey. A data-independent 9T SRAM cell with enhanced ION/IOFF ratio and RBL voltage swing in near threshold and sub-threshold region. I. J. Circuit Theory and Applications, 49(4):953-969, 2021. [doi]

@article{GuptaGP21,
  title = {A data-independent 9T SRAM cell with enhanced ION/IOFF ratio and RBL voltage swing in near threshold and sub-threshold region},
  author = {Monica Gupta and Kirti Gupta and Neeta Pandey},
  year = {2021},
  doi = {10.1002/cta.2951},
  url = {https://doi.org/10.1002/cta.2951},
  researchr = {https://researchr.org/publication/GuptaGP21},
  cites = {0},
  citedby = {0},
  journal = {I. J. Circuit Theory and Applications},
  volume = {49},
  number = {4},
  pages = {953-969},
}