A 12-b 4-MS/s SAR ADC With Configurable Redundancy in 28-nm CMOS Technology

Stefan Hänzsche, Sebastian Höppner, Georg Ellguth, René Schüffny. A 12-b 4-MS/s SAR ADC With Configurable Redundancy in 28-nm CMOS Technology. IEEE Trans. on Circuits and Systems, 61-II(11):835-839, 2014. [doi]

@article{HanzscheHES14,
  title = {A 12-b 4-MS/s SAR ADC With Configurable Redundancy in 28-nm CMOS Technology},
  author = {Stefan Hänzsche and Sebastian Höppner and Georg Ellguth and René Schüffny},
  year = {2014},
  doi = {10.1109/TCSII.2014.2345301},
  url = {http://dx.doi.org/10.1109/TCSII.2014.2345301},
  researchr = {https://researchr.org/publication/HanzscheHES14},
  cites = {0},
  citedby = {0},
  journal = {IEEE Trans. on Circuits and Systems},
  volume = {61-II},
  number = {11},
  pages = {835-839},
}