Double-gate line-tunneling field-effect transistor devices for superior analog performance

Simhadri Hariprasad, Surya Shankar Dan, Ramakant Yadav, Ashutosh Mishra. Double-gate line-tunneling field-effect transistor devices for superior analog performance. I. J. Circuit Theory and Applications, 49(7):2094-2111, 2021. [doi]

@article{HariprasadDYM21,
  title = {Double-gate line-tunneling field-effect transistor devices for superior analog performance},
  author = {Simhadri Hariprasad and Surya Shankar Dan and Ramakant Yadav and Ashutosh Mishra},
  year = {2021},
  doi = {10.1002/cta.3002},
  url = {https://doi.org/10.1002/cta.3002},
  researchr = {https://researchr.org/publication/HariprasadDYM21},
  cites = {0},
  citedby = {0},
  journal = {I. J. Circuit Theory and Applications},
  volume = {49},
  number = {7},
  pages = {2094-2111},
}