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An Analytical Model of Energy Band Considering Drain Doping Effect of TFET With Exponential Barrier

Qiao He, Qian Xie, Meng Zhao, Zixuan Yang, Zheng Wang 0050. An Analytical Model of Energy Band Considering Drain Doping Effect of TFET With Exponential Barrier. In 2021 IEEE International Conference on Integrated Circuits, Technologies and Applications, ICTA 2021, Zhuhai, China, November 24-26, 2021. pages 109-110, IEEE, 2021. [doi]

Authors

Qiao He

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Qian Xie

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Meng Zhao

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Zixuan Yang

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Zheng Wang 0050

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