A 5Gb/s/pin 16Gb LPDDR4/4X Reconfigurable SDRAM with Voltage-High Keeper and a Prediction-based Fast-tracking ZQ Calibration

Jin-Seok Heo, Kihan Kim, Dong-Hoon Lee, Chang-Kyo Lee, Daesik Moon, Kiho Kim, Jin-Hyeok Baek, Sung-Woo Yoon, Hui-Kap Yang, Kyungryun Kim, Youngjae Kim, Bokgue Park, Su-Jin Park, Joung-Wook Moon, Jae-Hyung Lee, Yun-Sik Park, Soobong Jang, Seok-Hun Hyun, Hyuck-Joon Kwon, Jung Hwan Choi, Young-Soo Sohn, Seung-Jun Bae, Kwang-Il Park, Jung-Bae Lee. A 5Gb/s/pin 16Gb LPDDR4/4X Reconfigurable SDRAM with Voltage-High Keeper and a Prediction-based Fast-tracking ZQ Calibration. In 2019 Symposium on VLSI Circuits, Kyoto, Japan, June 9-14, 2019. pages 114, IEEE, 2019. [doi]

@inproceedings{HeoKLLMKBYYKKPP19,
  title = {A 5Gb/s/pin 16Gb LPDDR4/4X Reconfigurable SDRAM with Voltage-High Keeper and a Prediction-based Fast-tracking ZQ Calibration},
  author = {Jin-Seok Heo and Kihan Kim and Dong-Hoon Lee and Chang-Kyo Lee and Daesik Moon and Kiho Kim and Jin-Hyeok Baek and Sung-Woo Yoon and Hui-Kap Yang and Kyungryun Kim and Youngjae Kim and Bokgue Park and Su-Jin Park and Joung-Wook Moon and Jae-Hyung Lee and Yun-Sik Park and Soobong Jang and Seok-Hun Hyun and Hyuck-Joon Kwon and Jung Hwan Choi and Young-Soo Sohn and Seung-Jun Bae and Kwang-Il Park and Jung-Bae Lee},
  year = {2019},
  doi = {10.23919/VLSIC.2019.8778102},
  url = {https://doi.org/10.23919/VLSIC.2019.8778102},
  researchr = {https://researchr.org/publication/HeoKLLMKBYYKKPP19},
  cites = {0},
  citedby = {0},
  pages = {114},
  booktitle = {2019 Symposium on VLSI Circuits, Kyoto, Japan, June 9-14, 2019},
  publisher = {IEEE},
  isbn = {978-4-86348-720-8},
}