Doping profile modification approach of the optimization of HfO x based resistive switching device by inserting AlO x layer

Yi Hou, Bing Chen, Zhe Chen, Feifei Zhang, Lifeng Liu, JinFeng Kang, Yuhua Cheng. Doping profile modification approach of the optimization of HfO x based resistive switching device by inserting AlO x layer. Science in China Series F: Information Sciences, 58(6):1-7, 2015. [doi]

@article{HouCCZLKC15,
  title = {Doping profile modification approach of the optimization of HfO x based resistive switching device by inserting AlO x layer},
  author = {Yi Hou and Bing Chen and Zhe Chen and Feifei Zhang and Lifeng Liu and JinFeng Kang and Yuhua Cheng},
  year = {2015},
  doi = {10.1007/s11432-015-5283-0},
  url = {http://dx.doi.org/10.1007/s11432-015-5283-0},
  researchr = {https://researchr.org/publication/HouCCZLKC15},
  cites = {0},
  citedby = {0},
  journal = {Science in China Series F: Information Sciences},
  volume = {58},
  number = {6},
  pages = {1-7},
}