E-mode p-FET-bridge HEMT: Toward high VTH, low reverse-conduction loss and enhanced stability

Mengyuan Hua, Junting Chen, Chengcai Wang, Lingling Li, Ling Liu, Zheyang Zheng, Kevin J. Chen. E-mode p-FET-bridge HEMT: Toward high VTH, low reverse-conduction loss and enhanced stability. In Fan Ye, Ting-Ao Tang, editors, 14th IEEE International Conference on ASIC, ASICON 2021, Kunming, China, October 26-29, 2021. pages 1-4, IEEE, 2021. [doi]

@inproceedings{HuaCWLLZC21,
  title = {E-mode p-FET-bridge HEMT: Toward high VTH, low reverse-conduction loss and enhanced stability},
  author = {Mengyuan Hua and Junting Chen and Chengcai Wang and Lingling Li and Ling Liu and Zheyang Zheng and Kevin J. Chen},
  year = {2021},
  doi = {10.1109/ASICON52560.2021.9620369},
  url = {https://doi.org/10.1109/ASICON52560.2021.9620369},
  researchr = {https://researchr.org/publication/HuaCWLLZC21},
  cites = {0},
  citedby = {0},
  pages = {1-4},
  booktitle = {14th IEEE International Conference on ASIC, ASICON 2021, Kunming, China, October 26-29, 2021},
  editor = {Fan Ye and Ting-Ao Tang},
  publisher = {IEEE},
  isbn = {978-1-6654-3867-4},
}