Single bit-line 8T SRAM cell with asynchronous dual word-line control for bit-interleaved ultra-low voltage operation

Chi-Ray Huang, Lih-Yih Chiou. Single bit-line 8T SRAM cell with asynchronous dual word-line control for bit-interleaved ultra-low voltage operation. IET Circuits, Devices & Systems, 12(6):713-719, 2018. [doi]

@article{HuangC18-20,
  title = {Single bit-line 8T SRAM cell with asynchronous dual word-line control for bit-interleaved ultra-low voltage operation},
  author = {Chi-Ray Huang and Lih-Yih Chiou},
  year = {2018},
  doi = {10.1049/iet-cds.2018.5150},
  url = {https://doi.org/10.1049/iet-cds.2018.5150},
  researchr = {https://researchr.org/publication/HuangC18-20},
  cites = {0},
  citedby = {0},
  journal = {IET Circuits, Devices & Systems},
  volume = {12},
  number = {6},
  pages = {713-719},
}