Ji Hye Hwang, Ki-Jin Kim, Gwang-Ho Ahn. GaN/SiC 150nm 3W High Linearity 28GHz Power Amplifier. In International Conference on Information and Communication Technology Convergence, ICTC 2021, Jeju Island, Korea, Republic of, October 20-22, 2021. pages 1131-1133, IEEE, 2021. [doi]
@inproceedings{HwangKA21a, title = {GaN/SiC 150nm 3W High Linearity 28GHz Power Amplifier}, author = {Ji Hye Hwang and Ki-Jin Kim and Gwang-Ho Ahn}, year = {2021}, doi = {10.1109/ICTC52510.2021.9620748}, url = {https://doi.org/10.1109/ICTC52510.2021.9620748}, researchr = {https://researchr.org/publication/HwangKA21a}, cites = {0}, citedby = {0}, pages = {1131-1133}, booktitle = {International Conference on Information and Communication Technology Convergence, ICTC 2021, Jeju Island, Korea, Republic of, October 20-22, 2021}, publisher = {IEEE}, isbn = {978-1-6654-2383-0}, }