Impact of Linearity and Write Noise of Analog Resistive Memory Devices in a Neural Algorithm Accelerator

Robin B. Jacobs-Gedrim, Sapan Agarwal, Kathrine E. Knisely, Jim E. Stevens, Michael S. van Heukelom, David R. Hughart, John Niroula, Conrad D. James, Matthew J. Marinella. Impact of Linearity and Write Noise of Analog Resistive Memory Devices in a Neural Algorithm Accelerator. In IEEE International Conference on Rebooting Computing, ICRC 2017, Washington, DC, USA, November 8-9, 2017. pages 1-10, IEEE, 2017. [doi]

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