The Impact of Temperature and Switching Rate on the Dynamic Characteristics of Silicon Carbide Schottky Barrier Diodes and MOSFETs

Saeed Jahdi, Olayiwola Alatise, Petros Alexakis, Li Ran, Philip Mawby. The Impact of Temperature and Switching Rate on the Dynamic Characteristics of Silicon Carbide Schottky Barrier Diodes and MOSFETs. IEEE Transactions on Industrial Electronics, 62(1):163-171, 2015. [doi]

@article{JahdiAARM15,
  title = {The Impact of Temperature and Switching Rate on the Dynamic Characteristics of Silicon Carbide Schottky Barrier Diodes and MOSFETs},
  author = {Saeed Jahdi and Olayiwola Alatise and Petros Alexakis and Li Ran and Philip Mawby},
  year = {2015},
  doi = {10.1109/TIE.2014.2326999},
  url = {http://dx.doi.org/10.1109/TIE.2014.2326999},
  researchr = {https://researchr.org/publication/JahdiAARM15},
  cites = {0},
  citedby = {0},
  journal = {IEEE Transactions on Industrial Electronics},
  volume = {62},
  number = {1},
  pages = {163-171},
}