Temperature and Switching Rate Dependence of Crosstalk in Si-IGBT and SiC Power Modules

Saeed Jahdi, Olayiwola Alatise, Jose Angel Ortiz Gonzalez, Roozbeh Bonyadi, Li Ran, Philip Mawby. Temperature and Switching Rate Dependence of Crosstalk in Si-IGBT and SiC Power Modules. IEEE Transactions on Industrial Electronics, 63(2):849-863, 2016. [doi]

@article{JahdiAGBRM16,
  title = {Temperature and Switching Rate Dependence of Crosstalk in Si-IGBT and SiC Power Modules},
  author = {Saeed Jahdi and Olayiwola Alatise and Jose Angel Ortiz Gonzalez and Roozbeh Bonyadi and Li Ran and Philip Mawby},
  year = {2016},
  doi = {10.1109/TIE.2015.2491880},
  url = {http://dx.doi.org/10.1109/TIE.2015.2491880},
  researchr = {https://researchr.org/publication/JahdiAGBRM16},
  cites = {0},
  citedby = {0},
  journal = {IEEE Transactions on Industrial Electronics},
  volume = {63},
  number = {2},
  pages = {849-863},
}