Paria Jamshidi, Sasan Naseh. An 8-18 GHz Low noise amplifier design in 0.18μm CMOS technology. In IEEE International Conference on Ultra-Wideband, ICUWB 2012, Syracuse, NY, USA, September 17-20, 2012. pages 387-391, IEEE, 2012. [doi]
@inproceedings{JamshidiN12,
title = {An 8-18 GHz Low noise amplifier design in 0.18μm CMOS technology},
author = {Paria Jamshidi and Sasan Naseh},
year = {2012},
doi = {10.1109/ICUWB.2012.6340425},
url = {https://doi.org/10.1109/ICUWB.2012.6340425},
researchr = {https://researchr.org/publication/JamshidiN12},
cites = {0},
citedby = {0},
pages = {387-391},
booktitle = {IEEE International Conference on Ultra-Wideband, ICUWB 2012, Syracuse, NY, USA, September 17-20, 2012},
publisher = {IEEE},
isbn = {978-1-4577-2031-4},
}