Doyoung Jang, Marie Garcia Bardon, Dmitry Yakimets, Kenichi Miyaguchi, A. De Keersgieter, Thomas Chiarella, Romain Ritzenthaler, Morin Dehan, Abdelkarim Mercha. STI and eSiGe source/drain epitaxy induced stress modeling in 28 nm technology with replacement gate (RMG) process. In Proceedings of the European Solid-State Device Research Conference, ESSDERC 2013, Bucharest, Romania, September 16-20, 2013. pages 159-162, IEEE, 2013. [doi]
@inproceedings{JangBYMKCRDM13, title = {STI and eSiGe source/drain epitaxy induced stress modeling in 28 nm technology with replacement gate (RMG) process}, author = {Doyoung Jang and Marie Garcia Bardon and Dmitry Yakimets and Kenichi Miyaguchi and A. De Keersgieter and Thomas Chiarella and Romain Ritzenthaler and Morin Dehan and Abdelkarim Mercha}, year = {2013}, doi = {10.1109/ESSDERC.2013.6818843}, url = {http://dx.doi.org/10.1109/ESSDERC.2013.6818843}, researchr = {https://researchr.org/publication/JangBYMKCRDM13}, cites = {0}, citedby = {0}, pages = {159-162}, booktitle = {Proceedings of the European Solid-State Device Research Conference, ESSDERC 2013, Bucharest, Romania, September 16-20, 2013}, publisher = {IEEE}, }